层柱材料由于结构和性能极易调变的性质已引起人们的广泛兴趣。

Pillared layered materials are mostly mesoporous and they are noticed for the versatility in structure and property.

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首先，在利用自旋极化电流来驱动之磁性记忆体的研究中，发现藉由改变自 由层钴铁硼的覆盖层可以用来调变它的饱和磁化量以及自旋阻尼系数。

Firstly, in the concept of spin torque transfer MRAM, we can manipulate the damping constant and saturation magnetization of CoFeB by simply adjusting the capping layers.

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