目前，化学机械抛光技术(CMP)被认为是能够实现晶圆表面局部平坦化和全局平坦化的最佳方法。
At the present time, chemical mechanical planarization (CMP) is the most effective technology for global and local planarization of the wafer in IC manufacturing.
介绍了在化学机械抛光过程中，可以通过抛光头与抛光台运动速度关系优化配置，降低晶片表面不均匀度，从而更好地实现晶片局部和全局平坦化。
This paper introduces that we can reduce Within wafer nonuniformity (WIWNU) to achieve part and full planarization by distributing the speed of polishing head and polis.
基于局部归一化的局部方差去噪模型在平坦区域去噪明显，但去噪速度慢，而且纹理细节保护欠佳。
Removal model based on local variance normalized can remove noise significantly in flat area but slowly and maintains the texture details poorly.
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