射频感应等离子体 Radio Frequency Induced Plasma
射频激发等离子体 [等离子] radio-frequency excited plasma
射频放电感应等离子体 rf induced plasma
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
本文介绍了用射频等离子体化学气相沉积的方法，在硅基底上制备得到具有优异性能的非晶态碳膜。
In this paper, the rf plasma deposited method has been reported. On the silicium substratum, the amorphous carbon film with excellent properties have been made.
研究结果表明：用射频等离子体增强化学气相沉积法，可以在PET上沉积厚度为纳米至微米级的非晶碳氢膜。
The results show: the amorphous hydrogenated carbon film can be fabricated on PET surface by plasma-enhanced chemical vapor deposition.
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