采用射频溅射制备BST薄膜，研究了薄膜的介电击穿特性。
Dielectric breakdown of BST thin films prepared by RF sputtering is studied in this paper.
这两种击穿过程均产生较强的辐射，且辐射频谱特征十分相似，表明云内闪电通道两端发生的击穿过程可能均为负击穿过程。
Radiation field spectra of the two concurrent breakdown processes are quite similar, indicating that the processes may be negative breakdown and may be caused by the same mechanisms.
经过这样处理后的器件，漏极射频电流损失小，器件击穿电压和输出功率得以提高。
The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
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