... wide bandgap emitter 宽禁带发射极 wide bandgap semiconductor 宽禁带半导体 wideband amplification 宽带放年夜 ...
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... 开源机器人（Open-source robotics） 热塑性海底管道（Thermoplastic subsea pipes） 宽禁带半导体（Wide-bandgap semiconductors） ...
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GaN is a new wide band gap semiconductor laser material.
GaN是一种新型的宽禁带半导体兰色发光与激光材料。
参考来源 - GaN中的缺陷与杂质 DEFECTS AND IMPURITIES IN GaNZnO is n-type wide band-gap semiconductor materials. Because of its highabsorption for light and good electron transportation, ZnO is used asphoto-electrodes of nanocrystalline solar cell which should have porousstructure and larger surface area.
ZnO是n-型宽禁带半导体材料,由于其具有高的光吸收和良好的电子输运性能,近年来被用作纳米晶太阳能电池的光阳极材料。
参考来源 - 纳米ZnO多孔薄膜的湿化学法制备研究·2,447,543篇论文数据，部分数据来源于NoteExpress
它弥补了宽禁带半导体输运性能差的缺点，已研制成大功率的HFET。
It remedies the weakness of low transport properties in wide bandgap semiconductors, based on these properties high power HFETs have been fabricated.
宽禁带半导体器件在有源相控阵雷达中的潜在应用在文中也进行了讨论。
Potential application of WBG semiconductor devices in active phased array radar are discussed in this paper as well.
长期从事先进功能材料薄膜制备和离子注入改性方面的科学研究，重点是宽禁带半导体材料与器件。
Main research fields are the preparation and ion implantation studies of advanced functional material films. The focuses are on the material and device characteristics of wide band gap semiconductors.
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