他发现在生成p型氮化镓的时候需要利用高温氨，以致于把氢原子引入了晶体之中。
He found that producing p-type gallium nitride, which made use of ammonia at high temperatures, trapped hydrogen atoms inside the crystal.
氮化镓最终被发现很难做到没有瑕疵，即使n型氮化镓很容易被造出，p型却不然。
Gallium nitride turned out to be difficult to grow without defects, and although n-type gallium nitride could be made easily, p-type could not.
20世纪80年代后叶akasaki和他的同事们在名古屋大学通过添加少许镁制造出首例p型氮化镓。
In the late 1980s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium.
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