该方法也包括执行第二注入工艺以便在硅层中注入附加的第二类型掺杂剂。
The method also includes performing a second implant process to implant additional dopant of the second type in the silicon layer.
该方法包括用第一类型掺杂剂掺杂硅层并且执 行第一注入工艺以便在硅层中注入与第一类型相反的第二类型的掺 杂剂。
The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
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