大多数传统的音频功率放大器是用双极型工艺设计和制造，其基础在于良好的双极型三极管特性。

Majority of conventional power amplifiers are designed using bipolar technology on the basis of well-known merits of bipolar transistors.

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无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。

Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.

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探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。

The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.

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