垂直腔半导体光放大器 VCSOA ; vertical cavity semiconductor optical amplifiers
垂直领导体制 vertical leadership system
半导体垂直腔面发射量子阱激光器是当前光电子学领域最活跃的研究课题之一。
Currently quantum well VCSEL (Vertical Cavity Surface Emitting Laser) is one of the most active research problems in the field of optoelectronics.
同时，利用相位渗透理论，数值计算了垂直腔半导体光放大器（VCSOA）中的有效腔长。
The efficient cavity length of vertical cavity semiconductor optical amplifier (VCSOA) is calculated with the theory of phase penetrating.
从速率方程和多层介质膜理论出发，构建了垂直腔半导体光放大器(VCSOA)的动态传输矩阵模型。
Starting from the rate equations and the theory of multilayer dielectric film, a dynamic transfer matrix model of vertical cavity semiconductor optical amplifiers (VCSOAs) was established.
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