由于交换是在硅片中进行的，性能就达到极高的速度。
Because switching is in silicon, performance is at wire speed.
利用激光诱导化学镀技术，首次在硅片上沉积出金属镍。
Deposition of metallic nickel on silicon substrate by laser-enhanced electroless plating technique is reported for the first time.
制造集成电路需要将如半导体和金属等多层材料放置在硅片上。
Making integrated circuits involves depositing layers of materials such as semiconductors and metals on a silicon wafer.
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