本课程全面介绍了半导体物理及半导体器件的理论基础。
This course deals with the theory base of semiconductor physics and semiconductor device in detail.
DSP和IPM 的采用，实现了先进理论与先进器件的结合。
The adoption of DSP and IPM has realized the combination of advanced theory and advanced device.
分析了腔镜反射率、量子阱数等参数对阈值电流、输出光功率的影响，并根据理论计算对器件参数进行了优化设计。
The effects of DBR reflectivity and well Numbers on threshold current and output power of bottom-emitting VCSELs were analyzed to design an optimal device structure.
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