讨论窄禁带半导体带间光吸收跃迁的理论和实验。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展。
This paper reviews the research on this effect in narrow gap semiconductors for infrared photo-electronic detectors.
And what we predict as an energy difference between two levels, we know should correspond to the energy of light that's either emitted, if we're giving off a photon, or that's absorbed if we're going to take on a photon and jump from a lower to a higher energy level.
我们预测,两个能级之间的能量差,我们知道,它要么和发出的光有关,如果它发出光子的话,要么它吸收光子,从低能级跃迁到,更高能级上去。
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