本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。

In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.

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同时，为了防止闩锁效应的产生，在电路的大尺寸数字输出反相器的PMOS管和NMOS管的周围增加了保护环。

At the same time, to prevent the generation of latch-up, guard rings are added around the large dimension digital output inverter PMOS and NMOS transistors of the circuits.

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