辐照造成的缺陷主要为双空位。辐照器件工作稳定可靠。
The induced defects by radiation are mainly duel vacancies, and the irradiated devices work stably and reliably.
我们也模拟了O2在含双空位的（5，5）碳纳米管上的吸附。
We also perform simulations for O2 adsorption on a (5,5) CNT with a double vacancy.
实验结果表明随辐照剂量的增加双空位缺陷的浓度并不会无限地增加；
The results show that the intensity of V_2 is not infinitely increased with the increasing of the neutron dose.
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