本文介绍采用密闭热系统拉晶工艺拉制硅单晶的情况。
The drawing of single crystal silicon in a closed thermal system is described.
大直径FZ硅单晶的拉制最大困难在于高频加热设备能力和成晶工艺条件。
The most difficulty in growing FZ-Si crystal lies on the capacity of high frequency generator and technological conditions in growing crystal.
多晶硅用直拉法(CZ)或磁场直拉法(mcz)拉制成单晶硅棒。
Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method (MCZ).
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