结果表明：随着触媒中碳化硼添加量的增加，含硼金刚石单晶的电阻率降低，可呈现半导体电阻特性。
The results show that the specific resistance of the boron-doped diamonds significantly decreased with the increase of boron concentration and to be a semiconductor.
本文提出了半导体锑化铟单晶位错显示中对样品处理的一种新方法，并通过大量的实验证实了这种方法的可行性。
The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments.
本发明涉及一种用于制造高质量半导体单晶锭的装置以及使用该装置的方法。
The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same.
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