光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展。
This paper reviews the research on this effect in narrow gap semiconductors for infrared photo-electronic detectors.
本文论述了四级微型半导体致冷器与红外探测器金属杜瓦瓶的钎焊方法。
This paper deals with method of soldering thermoelectric cooler with metal dewar of infrared detector.
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