半导体桥(SCB)通过桥膜放电进行含能材料的点火，具有低点火能量、高安全性以及能与数字逻辑电路组合等优点。

Semiconductor bridge (SCB) was utilized to ignite energetic materials with thin film discharge and characterized of low input energy, high safety and logic control possibility.

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本文报道了一种新型高功率径向桥电极垂直腔面发射半导体激光器（VCSEL）的研制。

We report the fabrication of a novel high-power vertical-cavity surface-emitting laser (VCSEL) with radial bridge electrodes in this letter.

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