半导体放电管是一种过压保护器件,是利用晶闸管原理制成的,依靠PN结的击穿电流触发器件导通放电,可以流过很大的浪涌电流或脉冲电流。其击穿电压的范围,构成了过压保护的范围。
在半导体放电管的版面设计上提出了多元胞结构版图。
A novel multi cell structure for semiconductor arrester is proposed.
另外,对于半导体放电管转折电压的测试,设计出相应的转折电压测试板,并完成调试。
Besides, the test board which is used for testing the semiconductor arrester's breakover voltage is designed.
半导体放电管是新一代抗浪涌保护器件,极间电容是其应用到高频环境下的一个限制因素。
Semiconductor arrester is a new type of surge protection device, which, however, has a large interelectrode capacitance, thus limiting its application in high frequency systems.
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