·2,447,543篇论文数据，部分数据来源于NoteExpress
本发明还提供含有由上述式（I） 表示的盐的化学放大型抗蚀剂组合物。
The invention further provides a chemically amplified positive resist composition comprising the salt represented by the formula (I).
因而这篇文章包括了我们在厚的化学放大胶光刻模型方面的努力，这些新的模型适用于SU-8胶。
Therefore, novel models for thick chemically amplified photoresist which fit well characters of SU-8 resist is set up.
这个模型在普通的化学放大胶光刻模拟的基础上，添加了溶胀模型和对显影速率随深度变化效应的模拟。
The models are based on usual simulation models for chemically amplified photoresist added with swell model and the model for depth - dependent dissolution rate effect.
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