...区域的 电场减小,所占栅极底下的耗尽区宽度较小,可有效地改善短沟道效应,抑制漏 致势垒降低(drain inducedbarrier lowering,DIBL)效应。
基于4个网页-相关网页
...的二次击穿值,这是 因为通常 ggNMOS 在泄放 ESD 脉冲时有两条电流 通路:1)漏引起的势垒降低(drain induction barrier lower,DIBL)效应所产生的电流通路;2)寄生的 BJT 导通后形成的电流通路.
基于4个网页-相关网页
尤其是当漏极加上高电压时,漏感应势垒降低(Drain Induced Barrier Lowering,DIBL)现象显著地降低了栅极电场对于通道的影响,导致即使栅极在没有施加电压的情况下,源极在漏极电场的影响下依...
基于3个网页-相关网页
结果表明:添加晶种可以降低产物成核所需克服的势垒、促进成核、大幅度缩短骨水泥的固化时间。
The results show that the seeds appear to reduce the setting time and increase the compressive strength.
用单载流子器件模拟表明ITO经高频放电处理后降低了器件界面的空穴注入势垒。
Analogy of hole injection barrier indicates that the interface barrier of ITO is lowered after being treated with the high frequency discharge method using hole-only devices.
的钝化效应减少了载流子的散射中心,降低了晶界势垒,有效地提高了载流子的迁移率。
F-passivation decreased the scattering centers of the carriers and the height of the potential barriers at the grain boundaries, thus, increased the Hall mobility of the carriers.
应用推荐