金属中的电子必须克服这个势垒层才能进入半导体。
Electrons from the metal will have to surmount the potential barrier to enter the semiconductor.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
制备了含两层绝缘层的双势垒结构隧道发光结，介绍了其结构特点，分析了电子在结中的共振隧穿特性。
The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed.
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