Deposition of 110 nm-thick W0.95Ni0.05 metal thin film stripes on InGaAsP/InP heterostructure wafer is carried out using both RF sputtering with the substrate under a negative DC bias of 120 V and a photoresist lift-off technique.
InGaAsP/InP双异质结构外延片在直流负偏压120 V作用下,利用射频溅射和光刻剥离技术在样品表面淀积厚为110 nm的W0.95Ni0.05金属薄膜应变条，并在该应变条下的半导体内形成了对InGaAsP/InP双异质结构侧向光具有良好限制作用的光弹波导结构。
参考来源 - 由W0.95Ni0.05金属薄膜形成光弹波导结构的热稳定性 Thermal Stability of Photoelastic Waveguide Structures Induced by W0.95Ni0.05 Metal Thin Film·2,447,543篇论文数据，部分数据来源于NoteExpress
细石器技术的本质是一种石片剥离技术，而非是石器的制作技术。
Microlithic technology is essentially a flaking technology, but not a tool - making technology.
重新封装薄膜，先进的剥离技术，暴露了压力感应层当消费者打开包。
Reseal film, an advanced peelable technology that exposes a pressure sensitive layer when the consumer opens the package.
综合考虑所摄图像序列中包含的几何轮廓信息与光亮度信息，采用立体相交技术和剥离技术，逐步求精地得到三维物体的八叉树表示。
Taking account of both silhouette information and intensity information in images, a carving algorithm is used to incrementally recovery the octree model of the object.
应用推荐