对锯切硅片时各工艺参数对切片表面质量的影响规律进行了理论研究。
The influences of technology parameters on silicon wafer surface quality when slicing are studied theoretically.
由于线锯切割具有切片薄、表面翘曲变形小、厚薄均匀和切口损失小等优点，被广泛用于单晶硅切片加工。
The wire sawing process has been applied to slice single silicon into thin wafers for its character of minimum warp, uniform thickness and low kerf loss.
适当提高锯丝的张紧力，在一定的变化范围内，采用高的锯丝速度和低的进给速度，可以获得好的切片表面质量。
Increasing the wire tension force properly, adopting the higher wire velocity and slower infeed velocity in a range, the high wafer surface quality can be obtained.
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