对ESD应力下扩散电阻的四个区域：线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。
Diffused resistor model under ESD stress in linear, saturation, multiplication and snapback, and secondary breakdown regions was analyzed.
结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
托卡马克装置产生等离子体击穿的条件是在真空室区域中达到足够大的环电压以及尽可能大的零场区。
The condition that plasma breakdown on Tokmak is get enough high loop voltage and large null field region in the vacuum vessel area.
应用推荐