The simulation result shows that the quasi-saturation phenomenon of the new device is reduced and its primary electronic performance are greatly improved.
通过对比模拟结果,验证了这种改进结构可以有效地缓解器件的准饱和现象,提高器件的电学特性。
参考来源 - 射频功率LDMOS器件设计·2,447,543篇论文数据，部分数据来源于NoteExpress
最后，研究了准饱和土体中埋置的半封闭隧道在爆炸荷载下的瞬态动力响应问题。
At last, the transient dynamic response of buried tunnel in partially saturated soil under blast load is studied.
该物理模型考虑了高压dmos器件的准饱和特性、沟道非均匀掺杂特性和温度效应。
The unique features of DMOS such as quasi-saturation, non-uniformly doped channel, and temperature dependencies are accurately modeled.
分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因，并对其进行了理论证明和模拟验证。
In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.
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