本文叙述了采用单晶硅压阻效应制作真空变送器的机理和关键工艺．给出了测量结果和结论，讨论了该元件应用范围等问题。
The mechanism and the key process of vacuum silicon pressure sensor are presented in this paper. And give the measuring results and conclusion, discuss the applications of the element.
研究了空间剖分步长、初始晶核半径、各向异性系数和过冷度对模拟结果的影响，确定了这些关键参数的取值范围。
The dependence of simulation results on the space step, the initial nucleus radius, anisotropy and undercooling studied, and how to choose the values of these parameters is settled.
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