基于半导体多量子阱中激子能级的EIT全光开关 Keywords: Semiconductor Multiple Quantum Wells; EIT; All-Optical Switching [gap=358]关键词：半导体多量子阱；电磁诱导透明；全光开关
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Beside, we have also made experiments on all-optical switches fabricated on GaAs/AIGaAs quantum wells materials.
此外,对基于多量子阱材料的全光开关也进行了实验研究。
参考来源 - 基于半导体化合物材料的全光开关研究In the future of all-optical communication, it needs all-optical switching to substitute current electrical switching to realize optical switching.
在未来的全光通信中,需要以全光开关代替目前的电子开关进行光交换。
参考来源 - 几种光纤光栅型非线性全光开关On the other hand, InGaAsP MQW showed a faster spin relaxation time around 1550nm. So InGaAsP MQW has a more considerable application foreground in the field of all-optical switching.
但是,GaAs量子阱的共振激发吸收峰(即开关的工作波长)在850nm左右,不适合现代通信系统的1550nm传输窗口,而实验发现InGaAsP多量子阱的电子自旋弛豫具有更快的速度,并且在1550nm波长处适合制作全光开关,因此InGaAsP多量子阱材料在全光功能开关领域有着更为可观的应用前景。
参考来源 - 用于电子自旋光开关的多量子阱材料研究·2,447,543篇论文数据，部分数据来源于NoteExpress
研究了所制备的聚合物的全光开关效应。
Furthermore, the all-optical switching effect of the polymer was investigated experimentally.
介绍了半导体全光开关的种类、特点和应用。
The paper presents the sorts, features and applications of semiconductor all optical switches.
折射率、色散和吸收系数是用于超高速全光开关的光学材料的重要品质指数。
Refractive index, chromatic dispersion and absorption coefficient are material figures of merit for ultrafast all optical switch.
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