荧光强度与激发光强度的三次方关系表明,有效的荧光产生起源于三阶非线性光学效应的增强。
The intensity dependence of integrated luminescence on pump power shows that this is a third-order nonlinear optical effect.
通过光致发光(PL)特性表征发现,干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍。
Photoluminescence (PL) measurements show that, the photoluminescence intensity of the quantum Wells is enhanced about 3 times after dry etching.
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