荧光强度与激发光强度的三次方关系表明，有效的荧光产生起源于三阶非线性光学效应的增强。
The intensity dependence of integrated luminescence on pump power shows that this is a third-order nonlinear optical effect.
通过光致发光(PL)特性表征发现，干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍。
Photoluminescence (PL) measurements show that, the photoluminescence intensity of the quantum Wells is enhanced about 3 times after dry etching.
控制光探测器的探测时间，发现不同探测时间下电池的发光强度不同，探测时间相同但偏压不同则光强也不同。
By controlling the detecting time, it is found that the light intensity is varied with the detection time, and also varied with the forward bias voltage in the same detection time.
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