深亚微米光学光刻工艺技术目前面临着越来越严重的挑战。
Deep? Sub? Micron optical lithography process is facing more and more serious challenge.
它应用了光学相移掩模方法，大大提高了现有光学光刻设备的分辨率水平。
It utilizes optical phase shifting mask to improve resolution limit for an existing wafer stepper.
成像质量是光学光刻机的最主要指标，硅片调焦调平测量是光刻机控制成像质量的基础。
Image quality is the key performance of the optical lithography tool and it relies on the performance of wafer focusing and leveling measurement system.
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