深亚微米光学光刻工艺技术目前面临着越来越严重的挑战。
Deep? Sub? Micron optical lithography process is facing more and more serious challenge.
它应用了光学相移掩模方法，大大提高了现有光学光刻设备的分辨率水平。
It utilizes optical phase shifting mask to improve resolution limit for an existing wafer stepper.
随着光学光刻极限分辨率的不断提高，当代光学光刻设备正面临着越来越严重的挑战。
With the continuous improvement of optical lithography limit resolution, the current lithography tool is facing with more and more serious challenge.
应用推荐