而这种计算机模拟方法不仅可以得到自由光电子的衰减曲线，还可同时获得各种俘获中心中载流子的行为曲线。
However, through computer simulation, it can obtain not only the decay curve of free photoelectrons, but also the behavior curve of carriers in all kinds of trapping centers.
延长曝光不仅增加新的复合中心，还改变原有复合中心的俘获截面。
Prolonged exposure not only increased new recombination center but also changed the capture cross section of original recombination centers.
优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。
Preferentialtrapping ofelectrons by iron centers was shown by Hall mobility measurements on optically-excited charge carriers.
应用推荐