Therefor an asymmetric sidewall structure is presented in this paper, in which a thick sidewall at drain side provides low tunneling leakage current, and a thin sidewall at source side insures large drive current.
为此本文给出一种侧墙不对称SOI结构SBSD-MOSFET，该器件获得了良好的开关特性，漏侧较厚的侧墙保证了小的泄漏电流，同时源侧较薄的侧墙能获得大的驱动电流。
参考来源 - 硅肖特基源漏MOSFET的模拟研究The spacer process composed of three layers "SiO_2-SiN-SiO_2" in the 0.18um logic product technology, and the third layer of spacer is the thickest and the easiest to suffer dust particle.
在0.18um逻辑产品的技术里,侧墙通常有三层不同的结构即SiO_2-SiN-SiO_2组成,其中第三层侧墙TEOS的厚度最大也最容易遭受尘埃微粒。
参考来源 - 侧墙TEOS·2,447,543篇论文数据，部分数据来源于NoteExpress
完整的玻璃侧墙可以看到相邻的酒桶仓库。
Its entirely glazed end wall provides views of the adjacent barrel store.
分析了光刻图形侧墙斜坡对离子注入后图形特征尺寸的影响。
Influences of side-wall slope of photolithography pattern on characteristic dimensions after ion implantation are analyzed.
利用光刻胶形成保护侧墙，用湿法腐蚀来形成发射极钝化边沿。
With the protection of photoresist sidewall, the emitter passivation ledge is fabricated by wet etch.
应用推荐