为了驱动方便，对于高边(High Side)的功率开关，如S i1 ，一般 采用P沟道MOSFET构成，R on 可取0.3Ω；而在低边(Low Side)的功率开关，如S i4 一般 采用N沟道MOSFET构成，R on 可取0.085Ω.
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简要介绍了低边平车的结构、主要技术参数和强度分析计算情况。
Briefly described are the structure, main technical parameters and strength analysis calculation of the low-side flat car.
利用I - DEAS软件，对低边耐候钢敞车车体钢结构进行有限元静强度分析。
Using I-DEAS software, finite element analysis of static strength of low-sided weathering steel gondola car body is carried out.
无论是高边和低边输出，采用了集成的功率DMOS晶体管是能够采购和栅极驱动电流2a沉没的。
Both the high side and low side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2a of gate drive current.
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