当则高侧 MOSFET导通比率小于30% 时，高侧和低侧（low side）一般采用不同的MOSFET。若输出电流为5 A及以下时，MOSFET供应商可提供不对称的双SO8 MOSFET。
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在3例峡部逆钟向阻滞者，低侧右房刺激诱发出短阵顺钟向心房扑动（简称房扑）；
Temporary clockwise atrial flutter was induced by pacing at low lateral right atrium in 3 cases with the counterclockwise block in the isthmus.
下为高侧和低侧输出电压闭锁电路内部防止IX 2120 B从分立功率IGBT转动，直到有足够的栅极电压。
Internal under voltage lockout circuitry for both the high side and low side outputs prevents the IX2120B from turning on the discrete power IGBTs until there is sufficient gate voltage.
该IX2120B补充IXYS ICD广泛的高压栅极驱动器， 低侧栅极驱动器，光隔离门极驱动器及全系列IXYS功率半导体的产品组合。
The IX2120B complements IXYS ICD's extensive portfolio of high voltage gate drivers, low side gate drivers, optically isolated gate drivers and the full range of IXYS power semiconductors.
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