CCD半导体元件乃是利用信号电压在半导体层之中建立电 位阱 ( Potential Well )，在形成后的电 位阱 中储存电荷，再以时序脉波将之传送到另一电 位阱 ，直到CCD输出端为止。
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最深位阱的位置随注入能量的增加渐渐向系统中心移动。
The location of the deepest well is moved towards the device center along with the increasing of injection energy.
净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。
The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
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