一种二端口SRAM存储器单元(20)包括耦合到存储节点的一对交叉耦合的反相器(40)。

A two-port SRAM memory cell (20) includes a pair of cross-coupled inverters (40) coupled to storage nodes.

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在写入操作结尾，写入字线被去断言，允许交叉耦合的反相器(40)正常工作并且保持存储节点(SN)的逻辑状态。

At the end of the write operation, the write word line is de-asserted, allowing the cross-coupled inverters (40) to function normally and hold the logic state of the storage node (SN).

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