针对先进纳米铜互连技术的要求，研究了脉冲电流密度对铜互连线电阻率、晶粒尺寸和表面粗糙度等性能的影响。
Aiming at the technology demand of advanced copper interconnection, the effect of pulse current density on cu layer properties such as resistance, crystal size and surface roughness were investigated.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
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