在此基础上运用数值反拉普拉斯变换(nilt)法分析互连电路的时域响应。
Then the numerical inversion of Laplace transform (NILT) is employed for the time domain response of the interconnect circuits.
针对高损耗衬底，基于复镜像理论，结合部分元等效电路法，建立了一种新的片上互连线物理模型。
A new physical model for on-chip interconnect on high lossy substrate is proposed based on complex image theory and PEEC.
本文首次利用时域有限差分(FDTD)法分析了高速集成电路芯片内半导体基片上的有耗互连传输线的电特性。
A full wave analysis of lossy interconnection lines on doped semiconductor substrates in high speed integrated circuits is carried out by means of a finite difference time domain (FDTD) approach.
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