采用许瓦兹-克里斯托福变换，求得了以椭圆锥为发射体的真空微电子二极管区域的电位分布的解析解。
In this paper, a conformal mapping analysis of a vacuum microelectronic diode is presented, which uses an elliptic cone conductor as its cathode.
决定阴极等离子体膨胀速度的因素主要有二极管区的电场强度、等离子体的密度梯度和等离子体温度梯度等因素。
Cathode plasma moves ahead to the anode and changes diode effective gap. Plasma's expanding velocity is determined by electric field, density gradient and temperature gradient.
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