在热丝化学气相沉积金刚石系统中，衬底温度是影响金刚石成膜质量的关键因素之一。
In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films.
另外，随着热丝与衬底间距的增大，沉积出的多晶硅薄膜样品的晶化率明显减小，薄膜的晶粒尺寸也相应减小。
In addition, with the increasing distance between the filament and the substrate, the crystalline volume fraction and the grain size of poly-Si films notablely decrease.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
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