此外,IDT的三端口(Tri-Port)器件系列值得一提,它们可实现同时访问存储器。该系列包括三款成员:其中,70V525M和70P525M的内核和I/O工作电压分别为3.0和1.8V。
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介绍了采用三端口阻抗条件设计双栅FET混频器的方法。
A design method of DGFET mixer with three-port impedance condition is also described.
本文提出利用任意三端口网络和可变衰减器测量复反射系数的新方法。
This paper presents a new method of measuring complex reflection coefficient using an Arbitrary three-port network and a variable attenuator.
它端口与端口之间的隔离度除与它本身的环行状态有关外，还与第三端口外接负载的反射系数有关。
The isolation at port and port between be differ that in addition to itself circulation state, and yet relate with the reflection-coefficient of external connective load at the three port.
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