英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
文中通过压气机叶片“修型”叶栅和常规叶栅的对比实验，研究了“修型”叶栅栅后三维流动特征。
A compressor end-modified cascade and its original cascade are compared experimentally to study the three-dimensional flow characteristics at the exit plane of the cascade.
与工作台相邻的第三个装置，包括传送带，板栅修边用模具和第二条传送带。
Adjacent to the table is the third unit which contains a belt conveyor, a grid trimming die and another belt conveyor.
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