不过， 令人 感到意外的是，在下周即将召开的2010年IEEE国际电子设备大会上，三星准备演讲的文章题目竟然是《gate-last工艺high-k金属栅设 备》。
At the 2010 IEEE International Electron Devices Meeting in San Francisco next week, Samsung will present a paper on a rival technology: ''gate-last high-k/metal gate devices.''
英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
三栅晶体管“鳍”映射到三维上，使得更多的晶体管放入到同一区域。
The Tri-Gate transistors have "fins" that project into the third dimension, above the plane of the chip, enabling even more transistors to be fit into the same area.
应用推荐