无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
利用工作在亚阈值区的MOS管代替传统电流基准中的三极管或电阻器件，实现了一款全cmos器件的电流基准。
The bipolar transistors or the resistors in the traditional current reference were replaced by MOS transistors working in the subthreshold region to achieve an all CMOS current reference.
利用三极管在饱和区的工作特性，方便地实现了由恒流充电至涓流充电的转换，减不了充电过程中的水损耗。
With the triode working characteristic in saturation field we implemented the conversion from constant-current charge to tiny-current charge and decreased leakage.
应用推荐