In the design of blocking voltage capability, the simplified formulas for the base region thickness and for the choice of doping concentrations are proposed.
提出了阻断电压设计中关于基区宽度和基区杂质浓度选择的简化公式。
It integrates advantages of present schemes and avoids the unreasonable blocking for single unqualified parameter, such as the frequency difference, the phase difference or the voltage difference.
该方法综合了现有方案的长处，可避免单一参数(频率差、相角差或电压差)不满足就闭锁快切的弊端。
This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors.
本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。
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