SCD developed the first vacuum etching machine in China, with vacuum flood bar in the etching chamber; no pool effect; etching factor is up to 4.0.
SCD开发了中国国内第一台真空蚀刻机，蚀刻室内加装真空水刀，从根本上解决了水池效应，蚀刻因子提高到4。0以上。
The dependence of etching rate and profile on the vacuum pressure, RF pow-er, gas composition and flow rate, and electrode temperature is analyzed.
分析了真空压力、射频功率、气体组合及其流量和电极温度对刻蚀速率、刻蚀剖面的影响；
The simulation results provide a theoretic guide for the fabrication of metallic nano-hole array by PS sphere's etching and vacuum depositing technology.
模拟结果为用PS球刻蚀技术制备金属纳米孔阵列的实验提供了理论支持。
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