far ultraviolet lithography 远紫外光刻
exetreme ultraviolet lithography 极紫外投影光刻
EUV extreme ultraviolet lithography 极端紫外平版印刷
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
通过深紫外光刻和感应耦合等离子刻蚀设备,制备了所设计的器件。
The results of electronic microscope scanning of sub-micrometer patterns by far ultraviolet lithography are given.
并给出远紫外光刻亚微米级图形的电镜扫描照片结果。
All-reflective optical systems, due to their material absorption and low refractive index, are used to create the most suitable devices in extreme ultraviolet lithography (EUVL).
由于材料的吸收和低折射率问题,极紫外光刻所采用的光学系统发展趋势是全反射型。
应用推荐