...粗糙度(Micro-roughness)，及俱生氧化物(Native Oxide)之清除，以达到半导体元件 (Device)超薄闸极氧化层(Ultra-Thin Gate Oxide)的电性參數及特性(Electrical Parameters and Characteristics)，并达到元件的品质及可靠度。
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Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
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