The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.

数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。

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Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.

最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。

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Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;

用双势垒模型研究了半导体异质结量子阱的隧穿特性。

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